| PART |
Description |
Maker |
| APT10SCD120BCT |
SiC Schottky Diodes
|
Microsemi
|
| MSICSN05120CA MSICSN05120CAE3 MSICSN05120CC MSICSN |
SiC Schottky Diodes
|
Microsemi
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| BAT68-02L BAT68-07 BAT68-08S BAT68-09S BAT68-06W B |
Silicon Schottky Diodes 硅肖特基二极
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range
Schottky Diodes - Silicon RF Schottky diode array
|
INFINEON[Infineon Technologies AG]
|
| BAS125-06W BAS125-05W BAS125-04W BAS125W |
Schottky Diodes - RF Schottky diode for low-loss, fast-recovery, meter protection, ...
Silicon Schottky Diodes
|
INFINEON[Infineon Technologies AG]
|
| AN4242 |
New generation of 650 V SiC diodes
|
STMicroelectronics
|
| SML10SIC03YC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
